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Related Concept Videos

P-N junction01:11

P-N junction

404
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
404

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Characterizing Inkjet-Printed Localized n+ and p+ Poly-Si Passivating Contacts for Silicon Solar Cells: Comparisons

Jiali Wang1, Thien Truong1, Sivacarendran Balendhran2

  • 1School of Engineering, The Australian National University, Canberra 2600, Australian Capital Territory, Australia.

ACS Applied Materials & Interfaces
|April 29, 2025
PubMed
Summary

Inkjet printing enables precise, localized doping for silicon solar cell passivating contacts. This method achieves enhanced surface passivation and addresses unintended doping challenges for improved solar cell efficiency.

Keywords:
TOPConex-situ dopinginkjet-printingliquid dopingpassivating contacts

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Renewable Energy

Background:

  • Passivating contacts are crucial for high-efficiency silicon solar cells.
  • Localized doping offers advantages for advanced solar cell architectures like interdigitated back contacts.
  • Inkjet printing presents a maskless, precise method for material deposition.

Purpose of the Study:

  • To fabricate and characterize localized boron- and phosphorus-doped polycrystalline silicon (poly-Si)/SiO2 passivating contacts using inkjet printing.
  • To investigate the simultaneous formation of p+ and n+ poly-Si/SiO2 lines via a single annealing step.
  • To analyze doping uniformity, surface passivation, and unintended doping effects.

Main Methods:

  • Maskless inkjet printing of liquid dopant inks.
  • Single-step annealing at 950 °C for simultaneous p+ and n+ line formation.
  • Optical microscopy, microphotoluminescence (μPL) mapping, dynamic secondary ion mass spectrometry (SIMS), and electrochemical capacitance-voltage (ECV) measurements.

Main Results:

  • Well-defined dopant lines with features down to ~60 μm were achieved.
  • μPL confirmed enhanced surface passivation in printed regions.
  • SIMS and ECV quantified dopant concentrations, revealing sharp line features.
  • Unintended doping in unprinted regions and cross-doping were observed, mitigated by a protective SiO2 layer.
  • Gas-phase transport, not lateral diffusion, was identified as the source of unintended doping.

Conclusions:

  • Inkjet printing is a viable technology for fabricating localized poly-Si/SiO2 passivating contacts.
  • Simultaneous p+ and n+ doping is achievable in a single anneal.
  • Strategies to mitigate unintended doping, such as protective layers, are effective.
  • The study provides insights for optimizing inkjet printing for interdigitated back contact solar cells.