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Updated: May 21, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Insulator-metal transition induced by band-filling modulation in molecular Mott insulators
Mayu Kaneko1, Masahiro Masuda1, Ryota Teruya1
1Department of Chemistry, Kumamoto University, 2-39-1 Kurokami, Chuo-ku, Kumamoto 866-8555, Japan. masaki@kumamoto-u.ac.jp.
Abstract:
Metallic x-Li(Pc)Br and x-Li(tbp)I were fabricated via halogen doping of the Mott insulators x-Li(Pc) and x-Li(tbp), where Pc and tbp denote the phthalocyaninato and tetrabenzoporphyrinato ligands, respectively. Crystal structure analyses revealed that halogen atoms in x-Li(Pc)Br and x-Li(tbp)I penetrated the channels of the pristine x-Li(Pc) and x-Li(tbp) during the chemical oxidation of the ligands. Raman spectroscopy indicated that bromine and iodine exist as Br3- and I3-, whereas iodine in the previously reported x-Li(Pc)I exists as I5-. These findings suggest that band-filling modulation by halogen doping depends on both the halogen species and the π-ligand. Although x-Li(Pc)Br was unstable during heat treatment, the dedoping process was successfully achieved using a reductant, demonstrating that the electronic states between the Mott insulating and metallic states can be chemically controlled.
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