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Updated: May 9, 2025

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
Published on: May 29, 2018
Colossal permittivity in high-entropy CaTiO3 ceramics by chemical bonding engineering
Jinghan Cai1, Shun Lan1, Bin Wei1,2
1State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, PR China.
Abstract:
Dielectrics with high permittivity, low dielectric loss, and good temperature stability are crucial for electronic components to meet the ever-increasing application demands. However, challenges remain in further optimizing dielectric properties due to the correlation between these parameters. Here, we propose a chemical bonding engineering strategy in high-entropy CaTiO3 ceramics and realize colossal permittivity with low loss and excellent stability. Our results reveal that the high-concentration oxygen vacancy ( )-related defects and the decreased activation energy of grain/grain boundary led to a colossal permittivity dielectric behavior, which should be ascribed to the weakened chemical bonding and the reduced formation energy of defects confirmed by our first-principles calculation. Consequently, in the high-entropy CaTiO3 ceramic, a permittivity of 2.37 × 105, low loss of 0.005, and good temperature stability (<± 15%) in -50-250 °C are simultaneously achieved. This finding implies that chemical bonding engineering may be a promising strategy for designing colossal permittivity materials and provides a broad opportunity for the development of other defect-dependent functional materials.
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