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Updated: Jun 12, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
All-electrical perpendicular switching of chiral antiferromagnetic order
Zhenyi Zheng1, Lanxin Jia1, Zhizhong Zhang2
1Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
None:
Antiferromagnets as active components in devices have been attracting attention due to their negligible stray field and ultrafast magnetic dynamics, which are promising for high-density and fast memory devices. Although the switching of antiferromagnetic (AFM) order by current-induced spin-orbit torque (SOT) has already been realized, field-free SOT-induced bidirectional switching of AFM order in perpendicular geometry has been elusive. Here we experimentally demonstrate field-free perpendicular switching of the magnetic octupole moct in chiral AFM Mn3Sn by combining in-plane and out-of-plane SOTs generated by two-dimensional van der Vaals WTe2. The out-of-plane SOT breaks the in-plane inversion symmetry and leads to deterministic bidirectional switching of moct in polycrystalline Mn3Sn even without a fixed perpendicular moct easy axis. The switching ratio reaches up to 80% compared to 20-30% in polycrystalline Mn3Sn and the critical current density is reduced by an order of magnitude to around 1 MA cm-2. Our work promotes the development of chiral AFM devices toward practical application.
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