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Large Area Monolayer Graphene Transfer in Ultra-High Vacuum.

Darius Merk¹, Stefano Rusponi¹, Harald Brune¹

¹Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Station 3, Lausanne CH-1015, Switzerland.

The Journal of Physical Chemistry. C, Nanomaterials and Interfaces

|April 30, 2025

Summary

A novel ultrahigh vacuum graphene transfer method uses wafer bonding to deposit clean, large-area graphene monolayers and bilayers onto single-crystal surfaces, overcoming impurity and flake size limitations.

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Area of Science:

Materials Science
Surface Science
Nanotechnology

Background:

Existing graphene transfer methods suffer from impurities or limited flake size.
Achieving clean, large-area graphene films is crucial for advanced applications.

Purpose of the Study:

To develop an ultrahigh vacuum (UHV) compatible graphene transfer method.
To overcome limitations of current transfer techniques, such as impurities and small flake sizes.
To enable the transfer of clean, large-area graphene monolayers and bilayers.

Main Methods:

Wafer bonding technique utilizing a Teflon-supported graphene bilayer as the source.
Transferring graphene onto atomically clean Ir(111) and Cu(100) single-crystal surfaces.
Characterization using Auger electron spectroscopy, X-ray absorption spectroscopy, and scanning tunneling microscopy.

Main Results:

Successful transfer of 70-100% of a graphene monolayer over 5 × 5 mm² areas.
Transferred graphene is free from chemical defects, confirmed by X-ray absorption spectroscopy.
High structural quality and characteristic moiré structures were observed, comparable to chemical vapor deposition.

Conclusions:

The developed UHV wafer bonding method provides a clean and efficient way to transfer large-area graphene.
This technique enables the creation of defect-free graphene layers for sealing surfaces or fabricating 3D metamaterials.
The method demonstrates versatility by successfully transferring both monolayers and bilayers.