Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

627
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
627
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

243
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
243

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

The response of microbial necromass C and its contribution to SOC to vinasse biochar based on a pot experiment.

Frontiers in microbiology·2026
Same author

Serplulimab Plus Chemotherapy, with or without HLX04, versus Chemotherapy as First-Line Treatment for Nonsquamous NSCLC: Final Survival Analysis of the Phase III ASTRUM-002 Study.

Cancer communications (London, England)·2026
Same author

The phyllosphere as a potential microbial habitat sharing taxa with the Jiang-flavor Baijiu fermentation system: A preliminary study.

Food research international (Ottawa, Ont.)·2026
Same author

Phase Ib/II Study of Preliminary Efficacy, Safety and Pharmacodynamics of MG-K10, a Humanised Monoclonal Antibody Targeting IL-4Rα, in Adult Chinese Patients With Asthma.

Clinical and experimental allergy : journal of the British Society for Allergy and Clinical Immunology·2026
Same author

Waste Baijiu Distillers' Grain-Derived Porous Biochar: A Promising Material for Bisphenol AF Removal from Water Through Both Adsorption and Advanced Oxidation Process.

Molecules (Basel, Switzerland)·2026
Same author

Real-world effectiveness and safety of adebrelimab as first-line treatment in patients with extensive-stage small cell lung cancer.

Translational lung cancer research·2026

Related Experiment Video

Updated: May 13, 2025

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.4K

Elemental Modulation Inducing Defect Engineering to Enhance Electrochemical Capacitance and Rectification Performance

Bi Chen1, Wei-Bin Zhang1, Jie Feng1

  • 1College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu 610059, China.

Inorganic Chemistry
|May 2, 2025
PubMed
Summary

High-entropy oxides with engineered defects improve electrochemical capacitor diodes. This advancement enhances energy storage and rectification, paving the way for advanced electronic devices.

More Related Videos

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

3.0K
Fabrication of Spatially Confined Complex Oxides
08:45

Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

9.5K

Related Experiment Videos

Last Updated: May 13, 2025

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.4K
Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

3.0K
Fabrication of Spatially Confined Complex Oxides
08:45

Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

9.5K

Area of Science:

  • Materials Science
  • Electrochemistry
  • Nanotechnology

Background:

  • Electrochemical capacitor diodes integrate energy storage and ion rectification but face limitations in performance.
  • Existing materials struggle with insufficient rectification ratios and specific capacitance for widespread adoption.

Purpose of the Study:

  • To develop advanced electrode materials for electrochemical capacitor diodes.
  • To enhance rectification ratio and specific capacitance using high-entropy oxides.
  • To investigate the impact of defect engineering on material properties.

Main Methods:

  • Synthesis of high-entropy oxides, specifically (CrMnFeCoNiLi)3O4.
  • Defect engineering and lattice optimization to enhance electrical conductivity.
  • Characterization of electrochemical performance, including specific capacitance and rectification ratio.
  • Cyclic stability and constant voltage tests.

Main Results:

  • The (CrMnFeCoNiLi)3O4 electrode exhibited a high specific capacitance of 272.04 F g-1 and energy density of 182.87 Wh kg-1.
  • Achieved favorable rectification performance with RRI of 6.5 and RRII of 0.95.
  • Demonstrated excellent stability with retained rectification performance after 1000 cycles.
  • Confirmed suitability for electronic circuits through constant voltage tests.

Conclusions:

  • Defect-engineered high-entropy oxides show significant potential for high-performance energy storage and conversion devices.
  • Optimized oxygen vacancies in high-entropy oxides enhance active sites and reaction kinetics.
  • This approach offers a promising pathway for advancing electrochemical capacitor diodes.