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Disentangling the Contribution of Surface and Bulk Ti3+ Defects to the Band Gap States of Rutile TiO2(011)
Yajie Gao1,2, Kaiping Wang3, Tianjun Wang4
1State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, Liaoning, P. R. China.
Abstract:
Band gap states (BGS) induced by Ti3+ defects play a pivotal role in the physical and chemical properties of TiO2. However, there is no consensus on the relative contributions of surface and bulk Ti3+ defects to the BGS measured by ultraviolet photoelectron spectroscopy (UPS). This is mainly due to the lack of vertical spatial resolution of UPS and limitations in the preparation and quantitative characterization of bulk Ti3+ defects. In this study, we create surface and bulk Ti3+ defects in a controllable way by introducing surface and bulk hydroxyls into rutile TiO2(011)-(2 × 1) via atomic deuterium exposure. Utilizing UPS combined with density functional theory (DFT) calculations, we successfully disentangled the contributions of surface and bulk Ti3+ defects to the BGS. The UPS data indicate that surface and bulk Ti3+ defects give rise to BGS at binding energies of approximately 0.85 and 1.57 eV, respectively. DFT calculations reveal that the separation of surface and bulk BGS originates from the distinct atomic environments of surface and bulk Ti3+ ions that induce characteristic 3d orbital splittings. Our finding that the surface and bulk Ti3+(OH) states are separated in energy could provide a fingerprint for the in situ monitoring of metal-support interactions and hydrogenation reactions in heterogeneous catalysis.
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