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Non-linear charge currents and the planar Hall effect in quantum wells with Rashba and Dresselhaus spin-orbit
Abhishek Khanal1, D C Marinescu1
1Department of Physics and Astronomy, Clemson University, Clemson, SC 29634, United States of America.
We calculated non-linear charge currents in 2D electron systems with Rashba and Dresselhaus spin-orbit interactions. These currents depend on electric and magnetic fields, offering insights into electron behavior under various conditions.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Two-dimensional electron systems (2DES) exhibit complex behaviors due to spin-orbit interactions (SOIs).
- Rashba and Dresselhaus SOIs significantly influence electron dynamics, particularly under external fields.
- Understanding non-linear charge transport is crucial for novel electronic device applications.
Purpose of the Study:
- To calculate non-linear charge currents in 2DES with both Rashba and Dresselhaus SOIs.
- To investigate the influence of in-plane electric and magnetic fields on these currents.
- To analyze the dependence of currents on chemical potential and spin-orbit coupling strengths.
Main Methods:
- Utilized a semi-classical approximation to derive a second-order correction to the particle distribution function, δf(2).
- Employed a rotated coordinate system to simplify the analysis of effective couplings (α±β).
- Calculated charge currents as a function of electric and magnetic field configurations and chemical potential.
Main Results:
- Non-linear charge currents, quadratic in the electric field, were found to exist for all chemical potential values.
- Currents perpendicular to the magnetic field are proportional to (α±β) when E⊥B.
- Currents are proportional to (α±β)²/(α∓β) when E∥B, independent of other SOIs.
Conclusions:
- The study provides a comprehensive calculation of non-linear charge currents in 2DES with combined Rashba and Dresselhaus SOIs.
- The derived current dependencies offer a theoretical framework for experimental verification and device design.
- The findings highlight the significant role of SOIs in tailoring electronic transport properties.
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