High Responsivity, Wide Spectral Range, Large Anisotropy Ratio, and Self-Driven Detection of MoS₂/BP Heterostructure...

The advancement of imaging systems calls for photodetectors that possess high sensitivity, wide spectral detection capabilities, self-driven functionality, and seamless integration. This research delves into the enhancement of electrical and optical responsiveness in MoS₂/BP photodetectors at a 0 bias voltage. Through the utilization of soft-plasma technology to modify silicon-based substrates, surface states were improved, and interface coupling with 2D materials was enhanced. By incorporating a MoS₂/BP heterojunction with these treated substrates, photodetectors were engineered to detect a broad spectrum of wavelengths ranging from visible light to near-infrared light (447-1550 nm) and operate in a zero-bias manner. These devices exhibited a maximum responsivity of 110.68 A/W, surpassing the performance of devices on untreated substrates by more than 500 times. The responsivity at 1550 nm saw an increase of over 3 orders of magnitude. Additionally, the rise and fall times were measured at 4.8 and 5.7 μs, respectively, with the polarization ratio improving from 0.18 to 0.51. These advancements in responsivity, spectral detection range, response time, and polarization ratio are pivotal for the practical implementation of self-driven multifunctional photodetectors on the market.