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Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe2
Justin Boddison-Chouinard1,2, Marek Korkusinski1, Alex Bogan1
1Quantum and Nanotechnologies Research Centre, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada.
Abstract:
Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between spin and valley degrees of freedom. Their strong spin-orbit interaction and broken inversion symmetry lead to the spin-valley locking effect, in which carriers occupying the K and K' valleys of the reciprocal space must have opposite spins. This effect is particularly strong for holes due to a larger spin-orbit gap in the valence band. By reducing the dimensionality of a monolayer of WSe2 to 1D via electrostatic confinement, we demonstrate that spin-valley locking and strong hole-hole interactions lead to a ferromagnetic state where hole transport is spin-valley polarized, even without an applied magnetic field. A massive Dirac fermion model in the Hartree-Fock approximation reveals that many-body hole-exchange interactions lead to this polarized ground-state. This observation opens the possibility of implementing a robust and stable valley-polarized system, essential in valleytronic applications.
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