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Magnetic Proximity Effects in Iron Germanium Telluride/Platinum Heterostructures
Stasiu T Chyczewski1, Suji Park2, Wenjuan Zhu1
1Department of Electrical and Computer Engineering, The Grainger College of Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
ACS Applied Materials & Interfaces
|May 9, 2025
Summary
Van der Waals magnetic materials like iron germanium telluride (FGT) show new magnetic properties when placed next to platinum. These magnetic proximity effects enhance spintronic device performance.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Van der Waals (vdW) magnetic materials are key for spintronic devices.
- Spin-orbit torque (SOT) devices utilize vdW magnets coupled with spin-charge conversion layers.
- Current-driven magnetization switching is a primary goal in SOT device development.
Purpose of the Study:
- To investigate emergent magnetic properties in heterostructures of iron germanium telluride (FGT) and platinum.
- To understand the role of magnetic proximity effects at the FGT/Pt interface.
- To explore the potential for engineering vdW spintronic systems.
Main Methods:
- Fabrication of FGT/Pt heterostructures.
- Characterization using magneto-transport measurements.
- Analysis of magnetic properties, including perpendicular magnetic anisotropy and magnetization reversal.
Main Results:
- Observed emergent magnetic properties attributed to magnetic proximity effects at the FGT/Pt interface.
- Demonstrated increased perpendicular magnetic anisotropy.
- Identified additional magnetization reversal steps, particularly in thinner FGT flakes.
- Confirmed robustness and consistency across samples from different vendors.
Conclusions:
- Magnetic proximity effects can be used to engineer the properties of vdW magnetic materials.
- FGT/Pt heterostructures exhibit tunable magnetic behavior with potential for advanced spintronic applications.
- This work highlights a pathway for designing next-generation spintronic devices.
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