Related Experiment Video
Updated: May 12, 2025

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
Published on: May 17, 2024
Antimony-Hybridization Engineering in p-n Heterojunctions for Optimized Electromagnetic Wave Absorption
Bowen Yu1, Zirui Jia1, Changpeng Lv2
1Shandong Key Laboratory of Low Dimensional Materials and Polymer Composites, College of Materials Science and Engineering, Qingdao University, Qingdao, 266071, P. R. China.
None:
The Sb-hybridization strategy enables the precise construction of p-n heterojunctions, which significantly enhances the electromagnetic wave (EMW) absorption performance by optimizing the interface polarization. In this study, an innovative in situ ion-exchange method is developed to implement Sb hybridization, establishing built-in electric fields within CoS2/Sb2S3@CNFs that amplify the polarization relaxation loss. This structural design synergistically combines a carbon-skeleton-induced conductive network with the magnetic loss mechanisms of CoS2, ultimately yielding an exceptional EMW absorber. The optimized composite demonstrates remarkable EMW attenuation capabilities, achieving a minimum reflection loss (RLmin) of -57.53 dB at 2 mm and an effective absorption bandwidth (EABmax) of 7.28 GHz (covering the X-band (8-12 GHz) and Ku-band (12-18 GHz)). This study not only provides a novel strategy for designing advanced EMW absorbers but also highlights the significance of p-n heterojunction engineering for EMW absorption in functional composites.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
P-N junction
Hybridization of Atomic Orbitals I

