Related Experiment Video
Updated: May 21, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Energy-Efficient Single Layer Spin Hall Nano-Oscillators Driven by Berry Curvature
Lakhan Bainsla1,2,3, Yuya Sakuraba4, Akash Kumar2,5,6
1Department of Physics, Indian Institute of Technology─Ropar, Roopnagar, Punjab 140001, India.
Abstract:
Spin Hall nano-oscillators (SHNOs) are emerging spintronic oscillators with significant potential for technological applications, including microwave signal generation, and unconventional computing. Despite their promising applications, SHNOs face various challenges, such as high energy consumption and difficulties in growing high-quality thin film heterostructures with clean interfaces. Here, single-layer topological magnetic Weyl semimetals open a possible solution as they possess both intrinsic ferromagnetism and a large spin-orbit coupling due to their topological properties. However, producing such high-quality thin films of magnetic Weyl semimetals that retain their topological properties and Berry curvature remains a challenge. We address these issues with high-quality single-layer epitaxial ferromagnetic Co2MnGa Weyl semimetal thin film-based SHNOs. We observe a giant spin Hall conductivity, σSHC = (6.08 ± 0.02) × 105 (ℏ/2e) Ω-1 m-1, which is an order of magnitude higher than previous reports. Theoretical calculations corroborate the experimental results with a large intrinsic spin Hall conductivity due to presence of a strong Berry curvature. Further, self spin-orbit torque driven magnetization auto-oscillations are demonstrated for the first time, at an ultralow threshold current density of Jth = 6.2 × 1011 A m-2. These findings indicate that magnetic Weyl semimetals have tremendous application potential for developing energy-efficient spintronic devices.
Related Concept Videos
Oscillations In An LC Circuit
Spin–Spin Coupling Constant: Overview
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must...
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

