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Published on: May 23, 2018
Tunable Electrical Resistivity in Single-Phase VO2 Nanowires Induced by Oxygen Vacancies under Electron Beam
Le Wang1, Yongqiang Zhang1, Xiaoguang Wang1
1Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano) & Hysitron Applied Research Center in China (HARCC), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, P. R. China.
Abstract:
Modulating the resistivity of individual VO2 nanowires without triggering phase transitions remains a significant challenge, but it is essential for enhancing the reliability of nanodevices and simplifying designs by avoiding structural instabilities. Here, we present an inspiring method for continuously and dynamically tuning the resistivity of individual stable M1-phase VO2 nanowires at room temperature using low-dose, site-specific electron beam treatment. Through in-situ electrical measurements inside a TEM, we demonstrate that the resistivity of M1-phase VO2 nanowires can be reduced by up to one order of magnitude. The resistivity change results from irradiation-induced oxygen vacancies and diffusion under the concentration gradient. Moreover, the modulation of resistivity does not compromise the mechanical robustness, ensuring the structural integrity and phase stability. These findings provide a controllable method for tuning the electronic properties of VO2 without triggering phase transitions, offering new opportunities for the application of metal oxide nanostructures in functional nanodevices.
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