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Related Experiment Video

Updated: May 12, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Moiré ferroelectricity modulates light emission from a semiconductor monolayer.

Dong Seob Kim^1,2, Chengxin Xiao³, Roy C Dominguez⁴

¹Department of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, TX 78712, USA.

Science Advances

|May 9, 2025

Summary

Ferroelectric moiré domains in twisted hexagonal boron nitride modulate light emission from adjacent semiconductor monolayers. This allows for dynamic electrical control of patterned light emission, enabling new nanophotonic devices.

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Semiconductor moiré superlattices exhibit periodic light emission.
Engineered photonic materials are crucial for advanced optical applications.

Purpose of the Study:

To demonstrate ferroelectric moiré domains modulating light emission from adjacent semiconductors.
To explore dynamic electrical control of patterned light emission.

Main Methods:

Utilizing twisted hexagonal boron nitride (t-hBN) as a substrate to form ferroelectric moiré domains.
Confining excitons in a semiconductor MoSe2 monolayer via electrostatic potential.
Observing spectral separation of confined excitons due to Stark shift.

Main Results:

Ferroelectric moiré domains in t-hBN successfully modulated light emission from MoSe2.
Exciton confinement and spectral separation were achieved due to the substrate's electrostatic potential and Stark effect.
Patterned light emission was dynamically controlled by electrically gating the ferroelectric domains.

Conclusions:

Ferroelectric moiré domains offer a novel method for controlling light emission in semiconductor materials.
This approach provides dynamic electrical tunability, surpassing limitations of existing semiconductor moiré superlattices.
Findings open pathways for integrating ferroelectric domains with functional layers for advanced nanophotonics and metasurfaces.