Related Experiment Video
Updated: May 12, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Mixed-Dimensional Floating Gate Phototransistors for Mixed-Modal In-Sensor Reservoir Computing
Weilun Ouyang1, Qirui Zhang1, Jiangang Chen1
1School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No.2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu, Sichuan, 611731, P. R. China.
Abstract:
Novel neuromorphic devices constructed from low-dimensional materials have demonstrated significant potential in visual perception and information processing. Colloidal quantum dots (QDs) exhibit strong light absorption and tunable band gaps, while 2D materials provide smooth interfaces and channels with superior charge carrier mobility. However, the potential of devices utilizing QDs as floating gates and 2D materials as channels remains largely underexplored. Herein, a floating-gate phototransistor based on the mixed-dimensional heterostructure of 0D-CsPbBr3 QDs and 2D-MoS2 few layer is introduced. By leveraging the optical advantages of 0D-QDs and the electrical properties of 2D materials, mixed-modal in-sensor reservoir computing (RC) is realized. Upon electrical/optical stimulation, the device demonstrates an on/off ratio of 107, over 7-bit multistates, nonlinear memory decay behavior, and dynamics with tunable time scales. Building upon these characteristics, the device enables mixed-modal RC using mixed-inputs of optical and electrical signals. Furthermore, accurate recognition of endangered species under extreme weather conditions is also demonstrated through audio-visual fusion. This study presents a compelling paradigm for utilizing the properties of different-dimensional materials to achieve mixed-modal information fusion and opens new pathways for mimicking biological multisensory fusion.
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Field Effect Transistor
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
MOSFET Amplifiers
Small-Signal Analysis of MOSFET Amplifiers

