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Vacancy-Ordered Hybrid Two-Dimensional Bi(III) Iodides with (100)-Oriented Dion-Jacobson Perovskite-Related
Aditi Saraswat1,2, Dheemahi Rao2,3, Ankit Kumar Gupta4
1New chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, P.O. Bengaluru 560064, India.
This study introduces novel lead-free 2D bismuth-iodide perovskites with narrower band gaps than lead-based alternatives. These materials demonstrate promising photoresponse for optoelectronic applications, including photovoltaics.
Area of Science:
- Materials Science
- Solid-State Chemistry
- Optoelectronics
Background:
- Two-dimensional (2D) hybrid iodide perovskites are crucial for optoelectronics.
- Traditional Pb2+ and Sn2+ based perovskites face toxicity and stability issues.
- Bismuth (Bi3+) halide alternatives are sought after for lead-free applications.
Purpose of the Study:
- To synthesize and characterize novel Dion-Jacobson type, vacancy-ordered 2D Bi-I perovskites.
- To evaluate their optoelectronic properties, focusing on band gaps and photoresponse.
- To explore their potential as lead-free alternatives in optoelectronic devices.
Main Methods:
- Synthesis of vacancy-ordered 2D Bi-I perovskites: (H2DAC)Bi2/3□1/3I4 and (H2DAP)Bi1/2□1/2I3·(I3)1/2.
- Band gap measurements and photoresponse characterization.
- Density Functional Theory (DFT) calculations to support experimental findings.
Main Results:
- Synthesized two novel 2D Bi-I perovskites with varying vacancy orders.
- Observed narrower band gaps (2.11 eV and 1.97 eV) compared to Pb2+ analogues (2.36 eV).
- Demonstrated positive photoresponse, with enhanced performance in (H2DAP)Bi1/2□1/2I3·(I3)1/2 due to I3- ions.
Conclusions:
- Successful synthesis of lead-free 2D Bi-I perovskites.
- These materials exhibit tunable optoelectronic properties suitable for next-generation devices.
- The findings pave the way for further investigation into Bi(III)-I perovskites for optoelectronics and photovoltaics.
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