Lateral Electric Field Engineering in Scaled Transistors Based on 2D Materials via Phase Transition.

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Controlling electric fields in field-effect transistors is crucial for reliable operation and longevity.
• Two-dimensional material (2DM)-based transistors face challenges in lateral electric field manipulation due to a lack of CMOS-compatible doping strategies.

Purpose of the Study:

• To develop a widely tunable, high-spatial-resolution doping technology for 2DMs.
• To enable effective lateral electric field modulation in 2DM-based transistors.

Main Methods:

• Utilized Ar plasma treatment on intrinsic Platinum Diselenide (PtSe2) to induce a phase transition and controllable doping.
• Achieved doping control with 100 nm length resolution, transitioning from semiconductor to metallic layers.
• Designed Ohmic-contact drain/source structures for PtSe2 transistors.

Main Results:

• Demonstrated high current density (245.5 μA/μm at Vd = 1 V) and low contact resistance (264 Ω·μm) in PtSe2 transistors.
• Achieved graded doping in drain/source regions, significantly reducing Joule heat generation.
• Observed a 33-fold increase in transistor lifetime compared to Ohmic-contact transistors with minimal on-state current degradation.
• Showcased effective suppression of the short-channel effect through lateral electric field modulation.

Conclusions:

• The developed doping technology offers precise control over electric fields in 2DM transistors.
• This advancement leads to enhanced device reliability, reduced self-heating, and extended operational lifetimes.
• The method is promising for overcoming limitations in 2DM transistor design and performance.