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Updated: May 13, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Bifacially Reinforced Self-Assembled Monolayer Interfaces for Minimized Recombination Loss and Enhanced Stability in
Chang Guo1,2, Hong-Qiang Du1,2, Yu-Chen Wang1,2
1State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China.
Abstract:
Perovskite/silicon tandem solar cells have shown higher power conversion efficiencies (PCEs) than single-junction cells. However, their record PCE still falls short of the theoretical maximum, and their stability is significantly lower than that of crystalline silicon solar cells. These challenges stem from the substantial losses in open-circuit voltage (VOC) and the instability of wide-bandgap perovskite devices, which are mainly caused by nonradiative recombination and degradation at the heterojunction interfaces, respectively. Specifically, the weak adhesion between indium tin oxide (ITO) and self-assembled monolayers (SAMs), along with inadequate interactions between the SAMs and the perovskite, contributes to this instability. Herein, a novel SAM material, 4-(11H-benzo[a]carbazol-11-yl)butyl (4-PhCz), has been developed to bifacially reinforce interfaces by enhancing SAM coverage on ITO and strengthening the interactions between SAM and perovskites. The resulting 1.67 eV perovskite solar cell (PSCs) achieves a VOC of 1.273 V with a low voltage loss of 0.397 V relative to the bandgap and a PCE of 22.53%. The 4-PhCz-based perovskite/silicon tandem cell achieves a VOC of 1.96 V and a PCE of 31.26%, retaining 92% of its initial efficiency after 1000 h of maximum power point tracking (MPPT) under 1-sun illumination in a nitrogen atmosphere at 25 °C.
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