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Updated: May 14, 2025
Fabrication and Characterization of Thickness Mode Piezoelectric Devices for Atomization and Acoustofluidics
Published on: August 5, 2020
Piezoresponse in WO3 Thin Films Enhanced by Pt-Nanoparticles as Revealed by Atom Probe Tomography and Cs-Transmission
Pamela M Pineda-Domínguez1, Torben Boll1,2,3, Abel Hurtado-Macias4
1Institut für Angewandte Materialien-Werkstoffkunde (IAM-WK), Karlsruhe Institute of Technology, Engelbert-Arnold-Strasse 4, Karlsruhe 76131, Germany.
Abstract:
Tungsten trioxide (WO3) is an intrinsic n-type semiconductor that can be prepared to exhibit a piezoresponse through doping and heat treatment strategies. We report the piezoresponse in platinum-doped WO3 thin films, prepared by RF/DC cosputtering, followed by postdeposition annealing at 600 °C. Measurements using Switching Spectroscopy Piezo Force Microscopy (SS-PFM) reveal domains with different polarization orientations and hysteresis behavior, corresponding to a piezoelectric coefficient of d 33 = 97 ± 6 pmV-1. Low-angle x-ray diffraction (XRD) indicates the presence of an orthorhombic structure (β-WO3) with a Pbcn space group, while Scanning Transmission Electron Microscopy (STEM) reveals the formation of platinum nanoparticles (∼5 nm) with a cubic structure (Fm m). Atom Probe Tomography (APT) confirms the formation of Pt nanoparticles and Ar-enriched cavities within the WO3 matrix induced by the annealing process. These structural modifications create lattice strain, giving rise to piezoelectric domains with different polarization orientations.
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