Oxygen Vacancy Induced 2D Bi₂SeO₅ Non-Volatile Memristor for 1T1R Integration

Two-dimensional (2D) layered Bi₂SeO₅, a novel high-k oxide material, has shown considerable potential for enhancing memristor performance. In this study, high-crystallinity 2D Bi₂SeO₅ nanosheets were successfully exfoliated, demonstrating that oxygen-vacancy-induced Bi₂SeO₅ memristors exhibit superior nonvolatile characteristics. Specifically, these memristors exhibit an ultrahigh on/off ratio (up to 10¹⁰), an extremely low off-state current (10^-12 A), and rapid switching speeds (160 ns for SET and 110 ns for RESET). Moreover, the memristor demonstrates excellent retention and endurance capabilities. Additionally, by integrating SnS₂ transistors, a 1T1R (one transistor and one resistor) structure was constructed, which simplifies circuit design and enables AND gate logic and multivalue logic storage functions. This work establishes a solid foundation for the practical application of 2D high-performance oxide memristors in future high-density-integration and fast in-memory computing systems.