Jove
Visualize
Contact Us

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

269
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
269
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

256
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
256
Biasing of FET01:22

Biasing of FET

203
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
203
MOSFET01:16

MOSFET

402
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
402
Characteristics of MOSFET01:17

Characteristics of MOSFET

316
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
316
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

489
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
489

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Electrical Control and High-Bias Enhancement of Magnetoresistance in van der Waals Antiferromagnetic Spin-Filter Tunnel Field-Effect Transistor.

ACS nano·2026
Same author

Flush versus Standard Radiofrequency Ablation of the Great Saphenous Vein: Single-Center Experience.

Journal of endovascular therapy : an official journal of the International Society of Endovascular Specialists·2026
Same author

Structural and electronic signatures of stacking and intralayer transitions in epitaxial bilayer WSe<sub>2</sub> on GaP(111)B.

Nanoscale·2026
Same author

Differentiating Bipolar Spectrum Disorders From Other Psychiatric Disorders With Shared Features: Strategies and Implications.

The primary care companion for CNS disorders·2026
Same author

Imaging the flat bands of magic-angle graphene reshaped by interactions.

Nature·2026
Same author

A Comparative Study of Topical Treatments for the Management of Chronic Leg Ulcers in a Multi-Center Cohort.

Cureus·2026
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: May 21, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.3K

Van der Waals Inverted-Floating-Gate Transistors for Artificial Intelligence Electronics.

Mohamed Soliman1, Cédric Marchand2, Aymen Mahmoudi3

  • 1Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, Strasbourg 67034, France.

ACS Nano
|May 12, 2025
PubMed
Summary
This summary is machine-generated.

This study introduces a novel van der Waals device for advanced electronics. It enables efficient logic and memory operations, paving the way for next-generation artificial intelligence hardware.

Keywords:
artificial intelligencefloating gateneuronsynapsevan der Waals materials

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.4K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K

Related Experiment Videos

Last Updated: May 21, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.3K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.4K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • Traditional semiconductor technologies face limitations in scalability and power efficiency.
  • The development of novel materials and device architectures is crucial for advancing computing paradigms.
  • Van der Waals (vdW) materials offer unique electronic properties suitable for next-generation devices.

Purpose of the Study:

  • To introduce and demonstrate an inverted floating gate device architecture using all-van-der-Waals technology.
  • To explore the potential of this device for both logic and neuromorphic circuits.
  • To highlight its capabilities in in-memory computing and artificial neural networks.

Main Methods:

  • Fabrication of an inverted floating gate device with a polymorphic multilayer graphene floating gate and a ReS2 semiconductor channel.
  • Characterization of electrostatic coupling and dynamic conductance tuning.
  • Implementation and simulation of logic gates, synaptic plasticity emulation, and spiking neuron circuits.

Main Results:

  • The device architecture demonstrates efficient electrostatic coupling and dynamic conductance tuning.
  • Non-volatile logic gates for in-memory computing were successfully implemented.
  • Accurate emulation of synaptic plasticity (92% accuracy) and versatile spiking neuron circuits were achieved.
  • The device shows promise as a building block for artificial intelligence hardware.

Conclusions:

  • Hybrid integration of van der Waals materials offers a promising solution to overcome limitations of traditional semiconductor technologies.
  • The demonstrated device architecture is a versatile platform for next-generation logic, memory, and neuromorphic computing.
  • This work paves the way for advanced artificial intelligence electronics and future computing paradigms.