Compact Nonvolatile Reconfigurable Mode Converter by Sb₂S₃ Embedded in 4H-Silicon-Carbide-on-Insulator Platform

Nonvolatile switching is emerging and shows potential in integrated optics. A compact nonvolatile reconfigurable mode converter implemented on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform with a footprint of 0.5 × 1 × 1.8 μm³ is proposed in this study. The functional region features an Sb₂S₃ film embedded in a 4H-SiC strip waveguide. The functionality is achieved through manipulating the phase state of the Sb₂S₃. The high refractive index contrast between the crystalline Sb₂S₃ and 4H-SiC enables high-efficiency mode conversion within a compact footprint. The incident TM0 mode is converted to the TM1 mode with a high transmittance (T) beyond 0.91 and a mode purity (MP) over 91.72% across the 1500-1600 nm waveband. Additionally, when the Sb₂S₃ transitions to its amorphous state, the diminished refractive index contrast efficiently mitigates the mode conversion effect. In this state, the TM0 mode propagates through the functional region with minimal perturbation, exhibiting T ≥ 0.99 and MP₀ ≥ 97.65% within a 1500-1600 nm waveband. Furthermore, the device performances were investigated under partially crystallized states of Sb₂S₃. The proposed structure offers a broad range of transmittance differences (-16.42 dB ≤ ΔT ≤ 17.1 dB) and mode purity differences (-90.91% ≤ ΔMP ≤ 96.11%) between the TM0 mode and TM1 mode. The proposed device exhibits a high robustness within ±20 nm Δl and ±10 nm Δw. We believe that the proposed multi-level manipulation can facilitate a large communication capacity and that it can be deployed in neuromorphic optical computing.