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Angle-Engineered Bi0.94La0.06CuSeO Thin Films for High-Performance Transverse Thermoelectric Devices
Mingjing Chen1,2,3, Chenming Yue1,3, Tianchang Qin1,3
1Hebei Key Laboratory of Energy Metering and Safety Testing Technology, National & Local Joint Engineering Research Center of Metrology Instrument and System, College of Quality and Technical Supervision, Hebei University, Baoding 071002, China.
Sensors (Basel, Switzerland)
|May 14, 2025
Summary
Inclining BiCuSeO thin films enhances transverse thermoelectric (TTE) performance. Optimized inclination angles yield high output voltage, demonstrating potential for advanced optical and thermal sensing devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Thermoelectrics
Background:
- Bismuth copper oxychalcogenides (BiCuSeO) show promise for transverse thermoelectric (TTE) applications.
- La doping significantly enhances the TTE performance of BiCuSeO materials.
Purpose of the Study:
- Investigate the impact of inclination angle on the TTE performance of La-doped BiCuSeO thin films.
- Determine the relationship between voltage output and film inclination angle.
Main Methods:
- Fabrication of inclined Bi0.94La0.06CuSeO thin films using pulsed laser deposition.
- Measurement of TTE voltage response under ultraviolet pulsed laser, continuous-wave lasers, and a point-like heat source.
Main Results:
- Achieved a large output voltage of 31.4 V in a 10° inclined film under 308 nm UV laser irradiation.
- Demonstrated significant and linear responses across a broad spectral range (360 nm–10,600 nm) and with a heat source.
- Observed a direct proportionality between voltage and sin2θ, where θ is the inclination angle.
Conclusions:
- Inclination angle engineering is an effective strategy to optimize TTE performance in BiCuSeO films.
- La-doped BiCuSeO films exhibit potential for high-performance optical and thermal sensing TTE devices.
