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Bandgap of Epitaxial Single-Crystal BiFe1-xMnxO3 Films Grown Directly on SrTiO3/Si(001)
Samuel R Cantrell1, John T Miracle1, Ryan J Cottier2
1Materials Science Engineering and Commercialization Program, Texas State University, San Marcos, TX 78666, USA.
Abstract:
We report the growth and optical characterization of single-crystal BiFe1-xMnxO3 thin films directly on SrTiO3/Si(001) substrates using molecular beam epitaxy. X-ray diffraction confirmed epitaxial growth, film crystallinity, and sharp interface quality. Scanning electron microscopy and energy dispersive X-ray spectroscopy verified uniform film morphology and successful Mn incorporation. Spectroscopic ellipsometry revealed a systematic bandgap reduction with increasing Mn concentration, from 2.7 eV in BiFeO3 to 2.58 eV in BiFe0.74Mn0.26O3, consistent with previous reports on Mn-doped BiFeO3. These findings highlight the potential of BiFe1₋xMnxO3 films for bandgap engineering, advancing their integration into silicon-compatible multifunctional optoelectronic and photovoltaic applications.
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