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Published on: February 27, 2017
Asymmetric B←N Functionalized Benzothiadiazoles for High-Performance n-Type Semiconducting Polymers
Kewei Jiao1, Wei Song2, Di Liu1
1State Key Laboratory of Molecular Engineering of Polymers, Laboratory of Advanced Materials, Department of Materials Science, Fudan University, 2005, Songhu Road, Shanghai, 200438, China.
New boron-nitrogen (B←N) polymers offer enhanced performance for organic electronics. These novel n-type polymers achieve high electron mobility in transistors, even under bending stress.
Area of Science:
- Organic electronics
- Materials science
- Polymer chemistry
Background:
- Boron-nitrogen (B←N) containing polymers show promise in organic electronics.
- Developing effective B←N acceptor units for n-type polymers is challenging.
- High-performance organic transistors require advanced n-type semiconducting materials.
Purpose of the Study:
- To design and synthesize novel B←N functionalized acceptor units.
- To develop new n-type semiconducting polymers for organic transistors.
- To investigate the impact of B←N incorporation on polymer electronic properties and device performance.
Main Methods:
- Rational design and synthesis of asymmetric half-fused B←N functionalized benzothiadiazole derivatives (BTBN and FBTBN).
- Polymerization to create two new n-type polymers, PBTBN and PFBTBN.
- Characterization of polymer electronic properties, including lowest unoccupied molecular orbital (LUMO) levels.
- Fabrication and testing of organic field-effect transistors (OFETs) to evaluate electron mobility (µe).
- Assessment of device stability under mechanical stress (bending cycles).
Main Results:
- Synthesized BTBN and FBTBN derivatives incorporating the B←N motif.
- Developed PBTBN and PFBTBN polymers exhibiting significantly lowered LUMO levels (∼ -4.0 eV for PFBTBN).
- Achieved high unipolar n-type transistor performance with PFBTBN, demonstrating an electron mobility (µe) of 3.85 cm² V⁻¹ s⁻¹.
- The asymmetric B←N backbone stabilized the electronic structure and promoted a near-amorphous morphology.
- PFBTBN-based flexible transistors maintained high electron mobility (3.16 cm² V⁻¹ s⁻¹) after 1000 bending cycles.
Conclusions:
- Asymmetric B←N functionalized acceptors are effective for developing high-performance n-type semiconducting polymers.
- The developed polymers exhibit excellent electron mobility and stability, suitable for advanced organic electronics.
- This work highlights the potential of B←N chemistry in advancing organic transistor technology.
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