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Phenylselenol Healing Selenium Vacancies of Solution-Processed Tungsten Diselenide Enables High-Performance P-Type
Yang Hao1, Xiaoxiao Geng1, Jingkun Ren1
1College of Physics and Optoelectronic Engineering, College of Integrated Circuits, Key Lab of Advanced Transducers and Intelligent Control System, Taiyuan University of Technology, Taiyuan 030024, China.
Abstract:
Solution-processed semiconducting 2D single-crystal nanosheets with dangling-bond-free surfaces are tremendously promising in cost-effective and scalable printed (opto)electronic devices. Nevertheless, the scarcity of solution-processed p-type 2D semiconducting materials with high mobility remains a significant impediment to the advancement of thin-film transistors (TFTs) and, by extension, the development of complementary integrated circuits. In this work, we introduce a molecular approach to enhance the electrical performance of p-type tungsten diselenide van der Waals thin-film devices by employing phenylselenol modification. First, phenylselenol can effectively heal selenium vacancies in WSe2 nanosheets, thereby enhancing their crystallinity and, consequently, improving the overall quality of WSe2 thin film. In addition, the interface contact and energy-level structure between the WSe2 thin film and the metal electrode are optimized, thereby reducing the Schottky barrier height for hole transportation. As a result, the WSe2 TFTs exhibit a significant enhancement in hole mobility, reaching 35.22 cm2 V-1 s-1. This simple yet effective strategy for improving the electrical performance of WSe2 TFTs opens avenues for the development of advanced large-area logic technologies based on transition-metal dichalcogenide (TMD) semiconductors.
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