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Updated: May 16, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
High-Performance Atomic-Layer-Deposited Dual-Gate InGaO Thin-Film Transistors
Chenchen Ye1, Jiakang Li1, Peiyan Hong1
1Wuhan National High Magnetic Field Center, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China.
Abstract:
Amorphous oxide semiconductors (AOSs) have attracted considerable attention because of their high carrier density, low thermal budget, and large bandgap. However, the high electron density in AOSs hinders their ability to turn off effectively, resulting in a trade-off between the threshold voltage (Vth) and mobility (μ). In this work, we report high-performance dual-gate (DG) indium gallium oxide (IGO) TFTs utilizing localized O3 treatment to effectively passivate the oxygen vacancies (Vo) in the channel region of IGO TFTs, thereby achieving a positive Vth and high mobility. The 100 nm short-channel length (Lch) enhancement-mode IGO DG TFT exhibits an ideal subthreshold slope (SS) of 63 mV/dec, a maximum drain current IDS of 1.36 mA/μm, and a record high transconductance (gm) of 1008 μS/μm. This study demonstrates a novel method to overcome the trade-off between Vth and μ, showing that IGO DG-TFTs are promising transistors for enabling high-performance monolithic three-dimensional (M3D) integrated circuits.
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