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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Lingbo Xie1,2, Feng Shi1,2, Ye Tian1,2
1National Key Laboratory of Equipment State Sensing and Smart Support & College of Intelligence Science and Technology, Changsha, Hunan, 450046, China.
A new pulsed ion beam (PIB) technique precisely exfoliates atomic layers, creating large-scale, defect-free 2D material surfaces. This method enhances fabrication for semiconductors and catalysis, advancing 2D material applications.
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