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Erbium-Implanted WS2 Flakes with Room-Temperature Photon Emission at Telecom Wavelengths
Guadalupe García-Arellano1, Gabriel I López Morales1,2, Zav Shotan1
1Department of Physics, CUNY-City College of New York, New York, New York 10031, United States.
Rare-earth ions in two-dimensional (2D) materials like Er-doped WS2 offer a promising path for solid-state quantum technologies. These 2D-hosted, telecom-band emitters are stable across temperatures, enabling new device designs.
Area of Science:
- Quantum technologies
- Materials science
- Solid-state physics
Background:
- Optically addressable spin impurities in crystals are key for solid-state quantum technologies.
- Reconciling emitter and host material constraints is a major challenge.
- Rare-earth ions in two-dimensional (2D) materials offer a potential solution due to their atomic-like transitions and versatile van der Waals systems.
Purpose of the Study:
- To investigate the photon emission properties of Erbium (Er)-doped Tungsten Disulfide (WS2) flakes.
- To explore the potential of 2D materials as hosts for rare-earth quantum emitters.
- To assess the suitability of these systems for quantum technology applications.
Main Methods:
- Ion implantation of Erbium into WS2 flakes.
- Confocal microscopy for optical characterization.
- Ab initio calculations for theoretical analysis.
- Optical spectroscopy and polarization-selective measurements.
Main Results:
- Identified narrow, long-lived photoluminescence lines in the telecom band from Er-doped WS2.
- Activated these emission lines via low-temperature thermal annealing.
- Observed uniform spectral and polarization response across the ensemble of emitters.
- Demonstrated stable fluorescence brightness over a range of temperatures, indicating inefficient nonradiative relaxation.
Conclusions:
- Er-doped WS2 flakes provide a viable platform for 2D-hosted, telecom-band quantum emitters.
- The temperature stability and narrow linewidths are advantageous for quantum applications.
- This work opens avenues for novel solid-state devices integrating these emitters with photonic structures.
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