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Lithography-Free Chalcogenide Canvas for Photonic Integrated Circuits
Zhen Hu1, Yuru Li2, Ruifeng Zhong1
1School of Electronics and Information Technology & Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems & Southern Marine Science and Engineering Guangdong Laboratory (Zhuhai), Sun Yat-Sen University, Guangzhou 510006, China.
Researchers developed a lithography-free method for fabricating chalcogenide photonic devices. This approach uses laser-induced oxidation of antimony sulfide (Sb2S3) thin films, enabling versatile device creation and advanced optical functions.
Area of Science:
- Photonics and Materials Science
- Optoelectronics and Nanotechnology
Background:
- Chalcogenide integrated photonic devices offer wideband transparency but face fabrication challenges with silicon-based CMOS processes.
- Current methods limit the development and versatility of chalcogenide photonic devices.
Purpose of the Study:
- To present a flexible, lithography-free fabrication approach for chalcogenide photonic devices.
- To demonstrate the potential of chalcogenide thin films as a versatile platform for advanced photonic applications.
Main Methods:
- Leveraging the intrinsic oxidation susceptibility of chalcogenide materials.
- Utilizing continuous laser-induced local oxidation on antimony sulfide (Sb2S3) thin films.
- Achieving high refractive index modulation (>0.7) and spatial resolution (~0.6 µm) in the near-infrared spectrum.
Main Results:
- Demonstrated low-threshold laser-induced local oxidation of Sb2S3.
- Fabricated dynamic planar Fresnel zone plates with tunable beam focusing capabilities.
- Achieved high-precision spatial-spectral reconstruction using chalcogenide metasurface arrays.
Conclusions:
- Chalcogenide thin films can serve as a promising canvas for advanced photonic devices.
- The developed fabrication pathway is simplified, versatile, and significantly advances chalcogenide integrated photonics.
