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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: May 23, 2025

Key Factors Affecting the Performance of Sb2S3-sensitized Solar Cells During an Sb2S3 Deposition via SbCl3-thiourea Complex Solution-processing

Key Factors Affecting the Performance of Sb2S3-sensitized Solar Cells During an Sb2S3 Deposition via SbCl3-thiourea Complex Solution-processing

Published on: July 16, 2018

InCl3-modified In2O3/CdS double electron transport layers for high-performance Sb2(S, Se)3 solar cell.

Chuanyu Liu¹, Zixiu Cao¹, Wei Cheng¹

¹Institute of Photoelectronic Thin Film Devices and Technology, State Key Laboratory of Photovoltaic Materials and Cells, and Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin 300350, China.

The Journal of Chemical Physics

|May 22, 2025

Summary

This summary is machine-generated.

Indium chloride-modified indium oxide improves antimony selenosulfide solar cell performance. This interface engineering enhances carrier transport and boosts power conversion efficiency to 7.44%.

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Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

Published on: August 23, 2012

Area of Science:

Materials Science
Renewable Energy
Semiconductor Physics

Background:

Antimony selenosulfide (Sb2(S, Se)3) solar cells offer abundant resources and good photoelectric properties.
Device performance is often limited by poor heterojunction interfaces, particularly the P-N junction.

Purpose of the Study:

To improve the P-N heterojunction quality in Sb2(S, Se)3 solar cells.
To enhance carrier transport and overall device efficiency through interface modification.

Main Methods:

Utilized indium chloride-modified indium oxide (InCl3-modified In2O3) to tailor the P-N heterojunction.
Deposited cadmium sulfide (CdS) on the modified In2O3 layer.
Employed vapor transport deposition for Sb2(S, Se)3 film fabrication.

Main Results:

Significantly improved CdS layer quality and tailored the conduction band offset.
Enhanced preferred orientation of the Sb2(S, Se)3 film and increased built-in voltage.
Achieved a power conversion efficiency of 7.44% using InCl3-modified In2O3-assisted CdS double electron transport layers.

Conclusions:

InCl3-modified In2O3 effectively enhances Sb2(S, Se)3 solar cell performance by optimizing heterojunction interfaces.
This interface modification strategy is valuable for boosting solar cell efficiency and provides a reference for future research.