Holistic Design of Charge Transfer Layers for Highly Efficient and Stable AgBiS2 Quantum Dot Photodetectors
Jiahua Kong1, Zhonglin Du1, Yixiao Huang1
1Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Sci. & Tech. Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, 308 Ningxia Road, Qingdao, 266071, P. R. China.
Abstract:
Developing highly efficient and stable photodetectors based on eco-friendly AgBiS2 quantum dots (QDs) has garnered significant attention. However, optimizing charge transfer layers (CTLs) to enhance device performance and stability remains a critical challenge. Here, the study presents the development of highly efficient, stable, fully inorganic, self-powered AgBiS2 QD-based photodetectors through the holistic design of CTLs, consisting of zinc-copper-indium-sulfide QDs blended with black phosphorus nanosheets as hole-transport layers, and unzipped carbon nanotubes doped with ZnO nanoparticles as electron-transport layers. The rationally designed CTLs exhibit well-matched energy-level alignment with the AgBiS2 QDs layer and balanced charge mobility, resulting in a robust and efficient charge transfer system. The optimized device exhibits a responsivity of 20 mA/W and a detectivity of 1.9 × 1010 Jones at 1000 nm, among the best performance for heavy metal-free QD-based photodetectors. The all-inorganic nature of the devices demonstrates excellent stability for over 2 months in air, with minimal degradation in performance. Furthermore, these enhanced self-powered AgBiS2 QD-based photodetectors are used as light sensors in the receiver terminal of a near-infrared optical communication system. This work presents a comprehensive approach to the holistic design of CTLs in AgBiS2 QD-based photodetectors for achieving superior device performance and long-term stability.


