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Updated: Jun 12, 2025
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Published on: May 19, 2014
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Spin-orbit-torque based on Mn-based noncollinear antiferromagnets
Shiwei Chen1, Dequan Meng1, Guang Zeng1
1School of Physics, Hubei University, Wuhan 430062, People's Republic of China.
Summary
Mn-based non-collinear antiferromagnets show promise for advanced spintronic devices. Their unique properties enable efficient spin-orbit torque switching for faster, denser data storage solutions.
Area of Science:
- Spintronics
- Materials Science
- Condensed Matter Physics
Background:
- Increasing data volumes necessitate faster and denser spintronic devices.
- Non-collinear antiferromagnets offer unique properties like minimal stray fields and rapid dynamics.
Purpose of the Study:
- To review the application of Mn-based non-collinear antiferromagnets in spintronic devices.
- To explore their use as spin source and magnetic layers.
Main Methods:
- Review of crystal and magnetic structures.
- Analysis of charge and spin transport properties.
- Examination of spin-orbit torque (SOT) driven magnetization switching.
Main Results:
- Demonstration of all-electrical SOT-driven perpendicular magnetization switching using these materials as spin sources.
- Observation of deterministic switching of antiferromagnetic order and potential for self-induced switching when used as magnetic layers.
Conclusions:
- Mn-based non-collinear antiferromagnets are effective for SOT switching in spintronics.
- Future research should focus on further optimizing these materials for next-generation devices.
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