Biasing of FET
Biasing of Metal-Semiconductor Junctions
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Jan 18, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Yonghuan Chen1, Zilong He1, Fengyu Li1
1College of Chemistry and Materials Science, Guangdong Provincial Key Laboratory of Speed Capability Research, Su Bingtian Center for Speed Research and Training, Jinan University, Guangzhou, 510632, P. R. China.
The Hofmeister effect precisely controls the elasticity of flexible devices through ion-surface interactions. This review details its mechanisms and applications in electronics, optics, and biomedicine for advanced smart materials.
08:43Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
11:44Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
Published on: August 15, 2014
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: