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Interface-Directed Growth of Tin Perovskite for Efficient Light-Emitting Diodes
Junjie Feng1, Nana Chen1, Hao Min1
1State Key Laboratory of Flexible Electronics (LOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, 211816, China.
Advanced Materials (Deerfield Beach, Fla.)
|May 30, 2025
Summary
Controlling tin perovskite crystallization via substrate engineering enhances film quality and optoelectronic device performance. Interface-directed nucleation improves crystal growth for high-efficiency lead-free devices.
Area of Science:
- Materials Science
- Solid-State Physics
- Optoelectronics
Background:
- Controlling crystallization dynamics is crucial for high-performance lead-free optoelectronic devices.
- Solution-processed tin perovskites offer potential but face challenges in film quality and efficiency.
Purpose of the Study:
- To investigate substrate-regulated interfacial nucleation for controlling tin perovskite crystallization.
- To enhance the performance of tin perovskite optoelectronic devices through interface engineering.
Main Methods:
- Utilizing PEDOT:PSS substrates and modifying them with potassium citrate.
- Analyzing substrate-interface interactions and their effect on nucleation and crystal growth.
- Fabricating and characterizing tin perovskite films and devices.
Main Results:
- Pristine substrates led to bottom-interface nucleation, rapid upward crystallization, rough films, and low photoluminescence quantum efficiency (PLQE ≈26%).
- Potassium citrate modification weakened substrate interactions, enabling top-interface nucleation and controlled downward crystallization.
- Optimized films exhibited improved crystallinity, smoothness, and higher PLQE (≈41%).
Conclusions:
- Substrate-regulated interfacial nucleation is a key strategy for controlling tin perovskite crystallization.
- Interface engineering significantly enhances film quality and optoelectronic properties.
- Optimized tin perovskite LEDs achieved record external quantum efficiency (12.8%) and radiance (190 W sr⁻¹ m⁻²).

