Field Effect Transistor
Bipolar Junction Transistor
Biasing of FET
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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Wanrong Liu1,2,3, Jingwen Wang1,4, Pengshan Xie5
1Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics, Central South University, Changsha, Hunan, 410083, P. R. China.
Researchers developed novel neuromorphic processing arrays using HfO2-lithium aluminum germanium phosphate-HfO2 stacked dielectric (HLH FETs) for efficient satellite image processing. These devices mimic the brain
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