Temperature-independent Hall coefficient in hole-doped La₃Ni₂O₇thin films: evidence for single-band transport

Through Sr and Ca doping to the La sites, we successfully obtained the hole doped La3-xA_xNi₂O₇(A = Sr and Ca) thin films by using the pulsed-laser deposition technique. Temperature dependent resistivity shows an upturn at low temperatures, but some clear instabilities, either due to structure or the releasing of strain between the film and substrate, occur at high temperatures. After annealing the films under high pressure of oxygen atmosphere, the upturn at low temperatures is strongly suppressed; the high temperature instability is completely removed. Hall effect measurements show a clear hole-charge carrier behavior with the carrier density of an order of magnitude higher compared with the undoped films. Surprisingly, it is found that the Hall coefficient is almost temperature independent in the whole temperature region. Based on the expectations for a two-band model, our results may indicate the absence of multiband effect and suggest the decoupling of thedx2-y2anddz2orbitals, or the latter is too flat with a very heavy mass. This is contradicting to the rigid band picture of a bondingdz2band just below the Fermi energy in the pristine sample.