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Published on: May 29, 2018
Layer-dependent electronic, vibrational and optical properties of 2D AlSe crystals
Mousa Bejani1, Olivia Pulci1, Naser Karimi2
1Department of Physics, University of Rome, Tor Vergata, and INFN, Via della Ricerca Scientifica 1, I-00133 Rome, Italy. bejani78@gmail.com.
This study reveals that layered aluminum selenide (AlSe) exhibits stable structures and indirect semiconductor properties. Increasing layers enhance stability and modify electronic band gaps, with distinct spectral features for bulk versus 2D forms.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Layered materials offer unique electronic and structural properties.
- Aluminum selenide (AlSe) is a promising material for electronic applications.
- Understanding the properties of AlSe across different dimensionalities is crucial.
Purpose of the Study:
- To theoretically investigate the structural, electronic, and dynamical properties of bulk and few-layer AlSe.
- To explore the impact of stacking and layer number on AlSe properties.
- To analyze the vibrational and spectroscopic characteristics of AlSe systems.
Main Methods:
- Utilizing density functional theory (DFT) for structural and electronic property calculations.
- Employing density functional perturbation theory (DFPT) for dynamical property analysis.
- Applying various exchange-correlation functionals and including quasiparticle corrections.
Main Results:
- Identified a stable Se-Al-Al-Se tetralayer structure for AlSe.
- Determined all studied AlSe systems are indirect semiconductors with tunable band gaps.
- Observed similar phonon behavior across layers, indicating dynamical stability, with distinct spectral differences between bulk and 2D AlSe.
Conclusions:
- Layered AlSe structures are dynamically stable and possess tunable electronic properties.
- Quasiparticle corrections significantly impact the calculated band gaps of AlSe.
- Raman and IR spectra provide distinct fingerprints for bulk and layered AlSe, useful for material characterization.
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