Spin-Orbit-Torque-Driven Two-Terminal Giant Magnetoresistance Memristive Devices for In-Memory Computing

Tianli Jin1,2, Bo Zhang1,3, Dihua Wu4

  • 1School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.

Summary

This study presents a two-terminal spin-orbit torque-driven giant magnetoresistance memristive device for scalable processing-in-memory. The device integrates storage and logic, achieving high accuracy in AI tasks and demonstrating synaptic plasticity for neuromorphic computing.

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