Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

721
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
721
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

300
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
300

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Signatures of Edge States in Antiferromagnetic Van der Waals Josephson Junctions.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Ultrasound-driven programmable artificial muscles.

Nature·2025
Same author

Noise-enhanced stability in synchronized systems.

Science advances·2025
Same author

Detecting interference of lattice vibrations.

Nature materials·2025
Same author

Thermal Sight: A Position-Sensitive Detector for a Pinpoint Heat Spot.

Small science·2025
Same author

Resistively detected electron spin resonance and<i>g-</i>factor in few-layer exfoliated MoS<sub>2</sub>devices.

Journal of physics. Condensed matter : an Institute of Physics journal·2025

Related Experiment Video

Updated: Jun 13, 2025

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

3.2K

Silicon-based MEMS/NEMS empowered by graphene: a scheme for large tunability and functionality.

Mengqi Fu1, Zhan Shi2, Bojan Bošnjak3

  • 1Fachbereich Physik, Universität Konstanz, 78457, Konstanz, Germany.

Microsystems & Nanoengineering
|June 9, 2025
PubMed
Summary
This summary is machine-generated.

Graphene integration in micro-/nanoelectromechanical systems (MEMS/NEMS) enhances device performance. This hybrid system offers ultra-wide frequency tuning and mechanical property control via electrothermomechanical effects for advanced nanotechnology applications.

More Related Videos

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.5K

Related Experiment Videos

Last Updated: Jun 13, 2025

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

3.2K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.5K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Mechanical Engineering

Background:

  • Silicon-based micro-/nanoelectromechanical systems (MEMS/NEMS) are crucial for advanced applications.
  • Integrating graphene offers enhanced physical properties to silicon-based devices.
  • Existing MEMS/NEMS often require complex actuation systems.

Purpose of the Study:

  • To demonstrate and analyze a novel graphene/silicon nitride membrane integration for MEMS/NEMS.
  • To achieve ultra-wide static and dynamic parameter regulation in MEMS/NEMS.
  • To enable efficient on-surface actuation beyond the linear regime.

Main Methods:

  • Experimental integration of a hybrid graphene/silicon nitride membrane with metallic leads.
  • Theoretical analysis of the electrothermomechanical (ETM) effect.
  • Application of static and alternating voltages for parameter tuning and actuation.

Main Results:

  • Demonstrated ultra-wide frequency tuning and mechanical property regulation via localized ETM effects.
  • Achieved significant deformation (buckling transition) under static voltage.
  • Enabled resonator excitation far beyond the linear regime using alternating voltage without complex systems.

Conclusions:

  • The proposed graphene-integrated MEMS/NEMS scheme provides a compact, robust, and highly controllable system.
  • This integration significantly enhances tunability and functionality, enabling further device miniaturization.
  • The technology expands the application range of silicon-based MEMS/NEMS in nanotechnology.