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Spin-Splitting Magnetoresistance in Altermagnetic RuO2 Thin Films
Hongyu Chen1, Zi-An Wang2,3, Peixin Qin1
1School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
This study resolves the debate on RuO2 altermagnetism by demonstrating a spin-splitting magnetoresistance (SSMR) effect. This effect reveals the Néel vector orientation and confirms long-range magnetic order in RuO2 thin films.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Altermagnets exhibit unique correlations between magnetic exchange and crystal structure, offering spintronic potential.
- The altermagnetism of Ruthenium Dioxide (RuO2) remains debated despite its early discovery.
Purpose of the Study:
- To resolve the controversy surrounding RuO2 altermagnetism.
- To demonstrate a novel spin-splitting magnetoresistance (SSMR) effect driven by nonrelativistic spin splitting.
- To establish an electric method for probing the Néel vector in altermagnets.
Main Methods:
- Investigated magnetoresistance in (101)-RuO2/Co bilayers.
- Analyzed the spin-splitting magnetoresistance (SSMR) effect.
- Characterized the angular and temperature dependence of the SSMR effect.
Main Results:
- A sizable spin-splitting magnetoresistance (SSMR) effect was observed and disentangled.
- The SSMR effect exhibited unusual angular dependence with a phase shift, linked to Néel vector orientation.
- Pronounced temperature dependence of SSMR was observed, correlating with electron scattering.
- A Néel vector orientation along the [001] direction in RuO2 was unveiled.
Conclusions:
- The study demonstrates that spin-splitting magnetoresistance (SSMR) is a viable method for probing altermagnet Néel vectors.
- Long-range magnetic order is confirmed in thin films of RuO2.
- The findings contribute to understanding and utilizing altermagnetic materials in spintronics.
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