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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Wide Wavelength Band Responsive In2Se3/CIPS Heterojunction for Polarization Imaging Enhancement in Image Fusion
Haijuan Wu1, Zhicheng Lin1, Xiangyu Chen1
1College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
Abstract:
Polarization photodetectors suffer from insufficient sensitivity, slow response speed, and limited spectral response range. Therefore, the development of new photodetectors with broad spectral response, high sensitivity, excellent polarization sensitivity, and low cost has become the focus of the current research field. Herein, we report an In2Se3/CIPS heterojunction-based approach for high-performance photodetection, polarization-sensitive photodetection, and polarization imaging in the visible to near-infrared region (400-808 nm). Its high responsivity (41.42 A/W at 532 nm and 18.95 A/W at 808 nm) and specific detectivity (9.79 × 1011 Jones at 532 nm and 4.51 × 1011 Jones at 808 nm) outperforms most two-dimensional heterojunction photodetectors. In addition, the heterojunction has a fast response time (0.17s/0.33 s at 400 nm) and broadband polarization detection (6.04 at 400 nm and 5.7 at 808 nm). The proposed hierarchical fusion strategy effectively coordinates the multiangle polarization information, improves the response of polarization imaging detectors to signals under complex optical fields, and provides an effective image processing framework to enhance the environmental adaptability of polarization detectors, which further promotes the application of polarization detectors in high-precision photoelectric detection.

