Influence of Gd doping on Cu₂Sn_1-xGd_xS₃ thin film solar cell

The effect of the Gd/Sn composition ratio of Cu₂Sn_1-xGd_xS₃ is examined. The films are fabricated on glass substrates in a sulfur atmosphere via the spin coating. The influence of the Gd/Sn composition ratio on the structural, morphological, optical, and electrical properties of the films is investigated using X-ray diffraction, FESEM, UV-Vis, and Hall effect. XRD patterns for the films revealed that all films have a monoclinic polycrystalline. The morphological and optical properties of the films show the formation of spherical grains and polygonal structures with an energy band in the range of 2.10-1.50 eV. The electrical properties of the films are changed by increasing the Gd/Sn composition ratio in the film. Furthermore, the Cu₂Sn_1-xGd_xS₃/CdS heterojunction solar cell was modeled by SCAPS-1D. The optimized conditions yielded exceptional photovoltaic parameters, achieving an open-circuit voltage of 0.7885 V, short circuit current density of 41.09 mA/cm², fill factor of 85.30%, and an efficiency of 27.3%.