Two-dimensional anisotropic semiconductors: from structure and properties to device applications.

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Two-dimensional (2D) anisotropic semiconductors offer unique angle-dependent electronic and optical properties.
• Their distinct electronic band dispersion along different directions drives interest in electronic and optoelectronic applications.
• A comprehensive review bridging fundamental properties and device applications is currently lacking.

Purpose of the Study:

• To systematically review the electronic band structures, optical properties, and device applications of 2D anisotropic semiconductors.
• To bridge the gap between fundamental electronic band structure properties and practical optoelectronic device applications.
• To promote future research in designing novel electronic and optoelectronic devices using these materials.

Main Methods:

• Summarizing crystal structures and electronic band structures of typical 2D anisotropic semiconductors.
• Reviewing characterization methods for anisotropic electrical and optical properties (conductance, Raman, photoluminescence, optical absorption, second-harmonic response).
• Comparing and concluding the performance of polarized optoelectronic devices, including photodetectors and imaging systems.

Main Results:

• Detailed summary of electronic band structures and crystal structures for key 2D anisotropic semiconductors.
• Comprehensive review of anisotropic electrical and optical property characterization techniques.
• Performance comparison of polarized optoelectronic devices, identifying trends and capabilities.

Conclusions:

• 2D anisotropic semiconductors possess significant potential for advanced electronic and optoelectronic applications.
• This review consolidates knowledge on their properties and device performance, guiding future research.
• Further exploration is needed to fully exploit their unique characteristics for novel device designs.