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Dongwan Kim1, Phuc Dinh Nguyen1,2, Jiyeon Jeon1
1Semiconductor and Display Metrology Group, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea. mainue@kriss.re.kr.
Optimizing III-V semiconductor cladding structures in LEDs suppresses carrier overflow and enhances light emission. Higher doping and thicker layers in InAsSb/InAsPSb multiple quantum wells (MQWs) improve thermal performance and light output.
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