Optimizing InAsPSb/InAsP cladding structures to control carrier overflow and enhance emission in multiple quantum
Dongwan Kim1, Phuc Dinh Nguyen1,2, Jiyeon Jeon1
1Semiconductor and Display Metrology Group, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea. mainue@kriss.re.kr.
Nanoscale
|June 11, 2025
Summary
Optimizing III-V semiconductor cladding structures in LEDs suppresses carrier overflow and enhances light emission. Higher doping and thicker layers in InAsSb/InAsPSb multiple quantum wells (MQWs) improve thermal performance and light output.
Area of Science:
- Optoelectronics
- Materials Science
- Semiconductor Physics
Background:
- III-V compound semiconductors are crucial for optoelectronic devices.
- Multiple quantum wells (MQWs) are used to tailor light emission properties.
- Cladding layers play a vital role in carrier confinement and injection efficiency.
Purpose of the Study:
- To investigate the impact of InAsPSb/InAsP cladding structures on the performance of InAsSb/InAsPSb MQW-based LEDs.
- To understand how doping concentration and thickness of cladding layers affect light emission and carrier dynamics.
- To identify optimal cladding designs for suppressing carrier overflow and enhancing LED performance.
Main Methods:
- Fabrication of three types of III-V MQW LEDs with varying cladding structures (doping, thickness, quantum barrier).
- Electroluminescence (EL) measurements to analyze light emission characteristics.
- Temperature-dependent EL measurements to assess thermal performance and carrier confinement.
- Simulations to investigate interfacial barrier heights and their effect on carrier overflow and injection.
Main Results:
- LEDs with higher doping concentration and thicker cladding layers (MQW LED3) exhibited a single, stronger emission peak, suppressing carrier overflow.
- LEDs with lower doping and thinner cladding (MQW LED1, MQW LED2) showed weaker double emission peaks due to carrier overflow.
- MQW LED3 demonstrated superior thermal stability with higher activation energy, indicating improved carrier confinement.
- Simulations confirmed that optimizing interfacial barrier heights is critical for controlling carrier overflow and enhancing injection.
Conclusions:
- The design of cladding structures significantly impacts the performance of III-V MQW LEDs.
- Optimizing doping concentration and thickness of cladding layers is essential for suppressing carrier overflow and improving light emission.
- Strategic adjustment of interfacial barrier heights enhances carrier injection and overall device efficiency, crucial for advanced optoelectronics.
