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Published on: April 8, 2020
Vacancy Formation and Clustering Behavior in δ-MoN: A Systematic Density Functional Theory Study
1College of Food and Pharmaceutical Engineering, Suihua University, Suihua 152061, China.
Molybdenum nitride (MoN) vacancies significantly impact electronic properties. Mo vacancies cause electron loss, while N vacancies create electron gas, affecting conductivity in defect-rich MoN materials.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Chemistry
Background:
- Molybdenum nitrides (MoN) exhibit desirable physical properties due to their unique electronic structure.
- Synthesized MoN often contains structural defects, specifically metal (Mo) or non-metal (N) vacancies, impacting performance.
Purpose of the Study:
- To theoretically investigate the formation and impact of vacancies in delta-phase Molybdenum Nitride (δ-MoN) using density functional theory.
- To analyze the electronic structure changes and vacancy clustering behavior in δ-MoN.
Main Methods:
- Density Functional Theory (DFT) calculations.
- Construction and systematic study of various single, double, and triple vacancy configurations in δ-MoN.
- Analysis of electron distribution, vacancy binding energies, and electronic conductivity.
Main Results:
- Molybdenum vacancies (VMo) lead to localized electron loss, while Nitrogen vacancies (VN) result in trapped excess electrons forming an electron gas.
- Four types of vacancy binding clusters were identified: VMo-VN, VN-VMo-VN (sandwich), VN-VN, and VN-VN-VN.
- Both Mo and N vacancies induce anisotropic degradation of electronic conductivity, dependent on vacancy type and concentration.
Conclusions:
- Vacancy formation significantly alters the electronic landscape of δ-MoN, influencing its conductive properties.
- Understanding vacancy clustering and their electronic effects is crucial for tailoring MoN materials for specific applications.
- The study provides theoretical insights into defect engineering for optimizing molybdenum nitride-based devices.
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