Recent advances in monolithic-integrated lead-based optoelectronic devices
Shaoheng Xu1, Jiajun Luo2, Haisheng Song1
1Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.
Abstract:
Optoelectronic devices, including light sensors and light-emitting diodes, are indispensable for our daily lives. Lead-based optoelectronic materials, including colloidal quantum dots and lead-halide perovskites, have emerged as promising candidates for the next-generation optoelectronic devices. This is primarily attributed to their tailorable optoelectronic properties, industrialization-compatible manufacturing techniques, seamless integration with silicon technology and excellent device performance. In this perspective, we review recent advancements in lead-based optoelectronic devices, specifically focusing on photodetectors and active displays. By discussing the current challenges and limitations of lead-based optoelectronics, we find the exciting potential of on-chip, in-situ fabrication methods for realizing high-performance optoelectronic systems.


