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Updated: May 4, 2026
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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
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Metallicity and anomalous Hall effect in epitaxially strained, atomically thin RuO2 films
Seung Gyo Jeong1, Seungjun Lee2, Bonnie Lin3
1Department of Chemical Engineering and Materials Science, University of Minnesota-Twin Cities, Minneapolis, MN 55455.
Summary
Ultrathin strained ruthenium dioxide films exhibit the anomalous Hall effect (AHE) at lower magnetic fields. Epitaxial strain engineering enhances magnetism in these metallic altermagnetic films for spintronics.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- The anomalous Hall effect (AHE) signifies time-reversal symmetry breaking.
- Rutile RuO2 is a debated metallic altermagnetic material.
- Previous AHE observations in RuO2 required high magnetic fields and thick films.
Purpose of the Study:
- To investigate AHE in ultrathin, strained RuO2 films.
- To explore strain engineering's effect on magnetism in RuO2.
- To enable AHE detection at lower magnetic fields.
Main Methods:
- Growth of ultrathin TiO2/RuO2/TiO2 (110) heterostructures using hybrid molecular beam epitaxy.
- Characterization of metallicity and AHE in strained films.
- Density functional theory (DFT) calculations to understand magnetic properties.
Main Results:
- Ultrathin strained RuO2 films retain metallicity.
- A sizeable AHE was observed at significantly lower magnetic fields (< 9 T).
- Epitaxial strain was found to stabilize a noncompensated magnetic ground state and reconfigure magnetic ordering.
Conclusions:
- Ultrathin RuO2 serves as a promising platform for strain-engineered magnetism.
- Epitaxial design can advance spintronic technologies by enabling AHE detection.
- This work overcomes limitations of previous studies on AHE in RuO2.
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